Manufacturer Product Number:
STI18N65M2
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STI18N65M2-DG
Description:
MOSFET N-CH 650V 12A I2PAK
Detailed Description:
N-Channel 650 V 12A (Tc) 110W (Tc) Through Hole I2PAK
Inventory:
229 Pcs New Original In Stock
12876872
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STI18N65M2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
MDmesh™ M2
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
330mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
770 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STI18
Datasheet & Documents
Datasheets
Additional Information
Other Names
-1138-STI18N65M2
497-15550-5
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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