STI33N60M2
Manufacturer Product Number:

STI33N60M2

Product Overview

Manufacturer:

STMicroelectronics

DiGi Electronics Part Number:

STI33N60M2-DG

Description:

MOSFET N-CH 600V 26A I2PAK
Detailed Description:
N-Channel 600 V 26A (Tc) 190W (Tc) Through Hole TO-262 (I2PAK)

Inventory:

12879553
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STI33N60M2 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
MDmesh™ II Plus
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1781 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STI33

Datasheet & Documents

Datasheets

Additional Information

Other Names
497-15016-5
-497-15016-5
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
IPI60R099CPXKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
500
DiGi PART NUMBER
IPI60R099CPXKSA1-DG
UNIT PRICE
3.99
SUBSTITUTE TYPE
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