Manufacturer Product Number:
STP14NM65N
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STP14NM65N-DG
Description:
MOSFET N-CH 650V 12A TO220AB
Detailed Description:
N-Channel 650 V 12A (Tc) 125W (Tc) Through Hole TO-220
Inventory:
12879225
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STP14NM65N Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
-
Series
MDmesh™ II
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP14N
Additional Information
Other Names
-497-7024-5
1805-STP14NM65N
497-7024-5
1026-STP14NM65N
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPP60R380E6XKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IPP60R380E6XKSA1-DG
UNIT PRICE
1.13
SUBSTITUTE TYPE
Similar
PART NUMBER
TK10E60W,S1VX
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
30
DiGi PART NUMBER
TK10E60W,S1VX-DG
UNIT PRICE
1.31
SUBSTITUTE TYPE
Similar
DIGI Certification
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