Manufacturer Product Number:
STP6N65M2
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STP6N65M2-DG
Description:
MOSFET N-CH 650V 4A TO220
Detailed Description:
N-Channel 650 V 4A (Tc) 60W (Tc) Through Hole TO-220
Inventory:
12873687
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STP6N65M2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
-
Series
MDmesh™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.8 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
226 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP6N
Datasheet & Documents
Datasheets
Additional Information
Other Names
497-15040-5
-497-15040-5
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
AOT8N80L
MANUFACTURER
Alpha & Omega Semiconductor Inc.
QUANTITY AVAILABLE
988
DiGi PART NUMBER
AOT8N80L-DG
UNIT PRICE
0.64
SUBSTITUTE TYPE
Similar
DIGI Certification
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