Manufacturer Product Number:
STQ2HNK60ZR-AP
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STQ2HNK60ZR-AP-DG
Description:
MOSFET N-CH 600V 500MA TO92-3
Detailed Description:
N-Channel 600 V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
Inventory:
9835 Pcs New Original In Stock
12872963
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STQ2HNK60ZR-AP Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tape & Box (TB)
Series
SuperMESH™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number
STQ2HNK60
Datasheet & Documents
Datasheets
Additional Information
Other Names
STQ2HNK60ZRAP
497-12344-1
497-12344-3
Standard Package
2,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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