Manufacturer Product Number:
STU6N65K3
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STU6N65K3-DG
Description:
MOSFET N-CH 650V 5.4A IPAK
Detailed Description:
N-Channel 650 V 5.4A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
Inventory:
12878793
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STU6N65K3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
-
Series
SuperMESH3™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
STU6N65
Datasheet & Documents
Datasheets
Additional Information
Other Names
-497-13593-5
497-13593-5
Standard Package
75
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPU80R1K4P7AKMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
6
DiGi PART NUMBER
IPU80R1K4P7AKMA1-DG
UNIT PRICE
0.35
SUBSTITUTE TYPE
Similar
PART NUMBER
IPS65R950C6AKMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
150
DiGi PART NUMBER
IPS65R950C6AKMA1-DG
UNIT PRICE
0.66
SUBSTITUTE TYPE
Similar
DIGI Certification
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