Manufacturer Product Number:
2SA965-Y(F,M)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
2SA965-Y(F,M)-DG
Description:
TRANS PNP 120V 0.8A TO92MOD
Detailed Description:
Bipolar (BJT) Transistor PNP 120 V 800 mA 120MHz 900 mW Through Hole TO-92MOD
Inventory:
12891013
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2SA965-Y(F,M) Technical Specifications
Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 100mA, 5V
Power - Max
900 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Base Product Number
2SA965
Additional Information
Other Names
2SA965YFM
2SA965-Y(FM)
Standard Package
1
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Alternative Models
PART NUMBER
2SA1201-Y(TE12L,ZC
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
788
DiGi PART NUMBER
2SA1201-Y(TE12L,ZC-DG
UNIT PRICE
0.13
SUBSTITUTE TYPE
Similar
DIGI Certification
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