Manufacturer Product Number:
2SD2206(TE6,F,M)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
2SD2206(TE6,F,M)-DG
Description:
TRANS NPN 100V 2A TO92MOD
Detailed Description:
Bipolar (BJT) Transistor NPN 100 V 2 A 100MHz 900 mW Through Hole TO-92MOD
Inventory:
12891282
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2SD2206(TE6,F,M) Technical Specifications
Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A, 2V
Power - Max
900 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Base Product Number
2SD2206
Additional Information
Other Names
2SD2206TE6FM
2SD2206(TE6FM)
Standard Package
1
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
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