Manufacturer Product Number:
2SD2406-Y(F)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
2SD2406-Y(F)-DG
Description:
TRANS NPN 80V 4A TO220NIS
Detailed Description:
Bipolar (BJT) Transistor NPN 80 V 4 A 8MHz 25 W Through Hole TO-220NIS
Inventory:
12891327
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2SD2406-Y(F) Technical Specifications
Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 300mA, 3A
Current - Collector Cutoff (Max)
30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 5V
Power - Max
25 W
Frequency - Transition
8MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SD2406
Additional Information
Standard Package
50
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
KSD1408YTU
MANUFACTURER
Fairchild Semiconductor
QUANTITY AVAILABLE
12762
DiGi PART NUMBER
KSD1408YTU-DG
UNIT PRICE
0.48
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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