Manufacturer Product Number:
2SK2847(F)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
2SK2847(F)-DG
Description:
MOSFET N-CH 900V 8A TO3PIS
Detailed Description:
N-Channel 900 V 8A (Ta) 85W (Tc) Through Hole TO-3P(N)IS
Inventory:
12889911
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
2SK2847(F) Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2040 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)IS
Package / Case
TO-3P-3, SC-65-3
Base Product Number
2SK2847
Additional Information
Standard Package
50
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SSM3J36TU,LF
MOSFET P-CH 20V 330MA UFM
TK12A55D(STA4,Q,M)
MOSFET N-CH 550V 12A TO220SIS
SSM3K56FS,LF
MOSFET N-CH 20V 800MA SSM