2SK3309(TE24L,Q)
Manufacturer Product Number:

2SK3309(TE24L,Q)

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

2SK3309(TE24L,Q)-DG

Description:

MOSFET N-CH 450V 10A TO220SM
Detailed Description:
N-Channel 450 V 10A (Ta) 65W (Tc) Surface Mount TO-220SM

Inventory:

12889192
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2SK3309(TE24L,Q) Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
450 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-220SM
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
2SK3309

Additional Information

Standard Package
1,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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