Manufacturer Product Number:
2SK3565(Q,M)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
2SK3565(Q,M)-DG
Description:
MOSFET N-CH 900V 5A TO220SIS
Detailed Description:
N-Channel 900 V 5A (Ta) 45W (Tc) Through Hole TO-220SIS
Inventory:
12891515
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2SK3565(Q,M) Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
π-MOSIV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
2SK3565
Datasheet & Documents
Datasheets
Additional Information
Other Names
2SK3565(Q)
2SK3565Q
2SK3565QM
2SK3565Q-DG
2SK3565(Q)-DG
Standard Package
50
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STP6NK90ZFP
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
875
DiGi PART NUMBER
STP6NK90ZFP-DG
UNIT PRICE
1.43
SUBSTITUTE TYPE
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DIGI Certification
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