RN1106MFV(TL3,T)
Manufacturer Product Number:

RN1106MFV(TL3,T)

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

RN1106MFV(TL3,T)-DG

Description:

TRANS PREBIAS NPN 50V 0.1A VESM
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Inventory:

RFQ Online
12891550
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RN1106MFV(TL3,T) Technical Specifications

Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1106

Additional Information

Other Names
RN1106MFVTL3T
RN1106MFV(TL3T)DKR
RN1106MFV(TL3T)TR
RN1106MFV(TL3T)CT
Standard Package
8,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Alternative Models

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DiGi PART NUMBER
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UNIT PRICE
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DiGi PART NUMBER
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UNIT PRICE
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MANUFACTURER
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QUANTITY AVAILABLE
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MANUFACTURER
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UNIT PRICE
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DIGI Certification
certification_01
certification_02
certification_03
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certification_015
certification_08
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