Manufacturer Product Number:
RN1117(T5L,F,T)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN1117(T5L,F,T)-DG
Description:
TRANS PREBIAS NPN 50V 0.1A SSM
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Inventory:
12889759
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
RN1117(T5L,F,T) Technical Specifications
Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Discontinued at Digi-Key
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SSM
Base Product Number
RN1117
Datasheet & Documents
Datasheets
Additional Information
Other Names
RN1117 (T5L,F,T)
RN1117(T5LFT)TR
RN1117(T5LFT)CT
RN1117T5LFT
RN1117(T5LFT)DKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Alternative Models
PART NUMBER
DDTC114WE-7-F
MANUFACTURER
Diodes Incorporated
QUANTITY AVAILABLE
0
DiGi PART NUMBER
DDTC114WE-7-F-DG
UNIT PRICE
0.03
SUBSTITUTE TYPE
Similar
PART NUMBER
RN1117MFV,L3F
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
0
DiGi PART NUMBER
RN1117MFV,L3F-DG
UNIT PRICE
0.02
SUBSTITUTE TYPE
Similar
DIGI Certification
Related Products
RN1415,LF
TRANS PREBIAS NPN 50V 0.1A SMINI
RN1406S,LF(D
TRANS PREBIAS NPN 50V 0.1A SMINI
RN1116,LF(CT
TRANS PREBIAS NPN 50V 0.1A SSM
