Manufacturer Product Number:
RN1131MFV,L3F
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN1131MFV,L3F-DG
Description:
TRANS PREBIAS NPN 50V 0.1A VESM
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Inventory:
8000 Pcs New Original In Stock
13275883
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RN1131MFV,L3F Technical Specifications
Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1131
Datasheet & Documents
Datasheets
Additional Information
Other Names
264-RN1131MFVL3FTR
RN1131MFV,L3F(B
264-RN1131MFVL3FDKR
264-RN1131MFVL3FCT
Standard Package
8,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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