RN2110MFV,L3F
Manufacturer Product Number:

RN2110MFV,L3F

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

RN2110MFV,L3F-DG

Description:

TRANS PREBIAS PNP 50V 0.1A VESM
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Inventory:

7990 Pcs New Original In Stock
12890460
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RN2110MFV,L3F Technical Specifications

Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN2110

Datasheet & Documents

Datasheets

Additional Information

Other Names
264-RN2110MFV,L3FCT
264-RN2110MFV,L3FDKR
RN2110MFVL3F-DG
264-RN2110MFV,L3FTR
RN2110MFVL3F
Standard Package
8,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Alternative Models

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MANUFACTURER
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QUANTITY AVAILABLE
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DiGi PART NUMBER
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UNIT PRICE
0.03
SUBSTITUTE TYPE
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DiGi PART NUMBER
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UNIT PRICE
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SUBSTITUTE TYPE
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MANUFACTURER
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QUANTITY AVAILABLE
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DiGi PART NUMBER
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UNIT PRICE
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