Manufacturer Product Number:
RN2422TE85LF
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN2422TE85LF-DG
Description:
TRANS PREBIAS PNP 50V 0.8A SMINI
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 800 mA 200 MHz 200 mW Surface Mount S-Mini
Inventory:
4309 Pcs New Original In Stock
12891167
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RN2422TE85LF Technical Specifications
Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
65 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini
Base Product Number
RN2422
Datasheet & Documents
Datasheets
Additional Information
Other Names
RN2422(TE85L,F)
RN2422TE85LF-DG
264-RN2422TE85LFCT
264-RN2422TE85LFTR
264-RN2422TE85LFDKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
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