Manufacturer Product Number:
TJ9A10M3,S4Q
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TJ9A10M3,S4Q-DG
Description:
TJ9A10M3,S4Q
Detailed Description:
P-Channel 100 V 9A (Ta) 19W (Tc) Through Hole TO-220SIS
Inventory:
13002344
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TJ9A10M3,S4Q Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
U-MOSVI
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
19W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TJ9A10
Additional Information
Other Names
264-TJ9A10M3S4Q
Standard Package
50
Environmental & Export Classification
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
ISZ24DP10LMATMA1
TRENCH >=100V
IPP018N10N5XKSA1
TRENCH >=100V
PMPB13XNEZ
PMPB13XNE/SOT1220/SOT1220