Manufacturer Product Number:
TK125V65Z,LQ
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK125V65Z,LQ-DG
Description:
MOSFET N-CH 650V 24A 5DFN
Detailed Description:
N-Channel 650 V 24A (Ta) 190W (Tc) Surface Mount 4-DFN-EP (8x8)
Inventory:
5000 Pcs New Original In Stock
12945878
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TK125V65Z,LQ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
DTMOSVI
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
4-DFN-EP (8x8)
Package / Case
4-VSFN Exposed Pad
Base Product Number
TK125V65
Datasheet & Documents
Datasheets
Additional Information
Other Names
264-TK125V65Z,LQDKR
264-TK125V65Z,LQDKR-DG
264-TK125V65Z,LQTR
264-TK125V65Z,LQCT
264-TK125V65ZLQTR
264-TK125V65ZLQCT
264-TK125V65Z,LQTR-DG
TK125V65Z,LQ(S
264-TK125V65Z,LQCT-DG
264-TK125V65ZLQDKR
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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