Manufacturer Product Number:
TK2P90E,RQ
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK2P90E,RQ-DG
Description:
PB-F POWER MOSFET TRANSISTOR DPA
Detailed Description:
N-Channel 900 V 2A (Ta) 80W (Tc) Surface Mount DPAK
Inventory:
1982 Pcs New Original In Stock
12988128
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TK2P90E,RQ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.9Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet & Documents
Datasheets
Additional Information
Other Names
264-TK2P90E,RQTR
264-TK2P90E,RQDKR
264-TK2P90ERQDKR
264-TK2P90E,RQCT-DG
264-TK2P90ERQTR
264-TK2P90E,RQDKR-DG
264-TK2P90E,RQTR-DG
264-TK2P90E,RQCT
264-TK2P90ERQCT
Standard Package
2,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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