TK2R4A08QM,S4X
Manufacturer Product Number:

TK2R4A08QM,S4X

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

TK2R4A08QM,S4X-DG

Description:

UMOS10 TO-220SIS 80V 2.4MOHM
Detailed Description:
N-Channel 80 V 100A (Tc) 47W (Tc) Through Hole TO-220SIS

Inventory:

80 Pcs New Original In Stock
12965604
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TK2R4A08QM,S4X Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
U-MOSX-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.44mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.2mA
Gate Charge (Qg) (Max) @ Vgs
179 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13000 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
47W (Tc)
Operating Temperature
175°C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack

Datasheet & Documents

Datasheets
TK2R4A08QM,S4X

Additional Information

Other Names
264-TK2R4A08QMS4X
264-TK2R4A08QM,S4X-DG
264-TK2R4A08QM,S4X
TK2R4A08QM,S4X(S
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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