Manufacturer Product Number:
TK2R4E08QM,S1X
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK2R4E08QM,S1X-DG
Description:
UMOS10 TO-220AB 80V 2.4MOHM
Detailed Description:
N-Channel 80 V 120A (Tc) 300W (Tc) Through Hole TO-220
Inventory:
176 Pcs New Original In Stock
12965675
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TK2R4E08QM,S1X Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
U-MOSX-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.44mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.2mA
Gate Charge (Qg) (Max) @ Vgs
178 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13000 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
175°C
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK2R4E08QM,S1X(S
264-TK2R4E08QMS1X
264-TK2R4E08QM,S1X
264-TK2R4E08QM,S1X-DG
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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