Manufacturer Product Number:
TK39N60X,S1F
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK39N60X,S1F-DG
Description:
MOSFET N-CH 600V 38.8A TO247
Detailed Description:
N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-247
Inventory:
30 Pcs New Original In Stock
12891669
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TK39N60X,S1F Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
DTMOSIV-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK39N60
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK39N60XS1F
TK39N60X,S1F(S
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
DMT8008SPS-13
MOSFET N-CH 80V 83A PWRDI5060-8
SSM4K27CTTPL3
MOSFET N-CH 20V 500MA CST4
DMP2040UFDF-13
MOSFET P-CH 20V 13A 6UDFN
