Manufacturer Product Number:
TPN2R805PL,L1Q
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TPN2R805PL,L1Q-DG
Description:
MOSFET N-CH 45V 80A 8TSON
Detailed Description:
N-Channel 45 V 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Inventory:
4905 Pcs New Original In Stock
12890929
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TPN2R805PL,L1Q Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
U-MOSIX-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
45 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 22.5 V
FET Feature
-
Power Dissipation (Max)
2.67W (Ta), 104W (Tc)
Operating Temperature
175°C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.1x3.1)
Package / Case
8-PowerVDFN
Base Product Number
TPN2R805
Datasheet & Documents
Datasheets
Additional Information
Other Names
264-TPN2R805PL,L1QCT
264-TPN2R805PL,L1QDKR
264-TPN2R805PL,L1QTR
TPN2R805PLL1Q-DG
TPN2R805PLL1Q
Standard Package
5,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
TPN1R603PL,L1Q
MOSFET N-CH 30V 80A 8TSON
TK60E08K3,S1X(S
MOSFET N-CH 75V 60A TO220-3
TK3A60DA(STA4,Q,M)
MOSFET N-CH 600V 2.5A TO220SIS
