TPW5200FNH,L1Q
Manufacturer Product Number:

TPW5200FNH,L1Q

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

TPW5200FNH,L1Q-DG

Description:

PB-F POWER MOSFET TRANSISTOR DSO
Detailed Description:
N-Channel 250 V 26A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance

Inventory:

4822 Pcs New Original In Stock
12989816
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

TPW5200FNH,L1Q Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
U-MOSVIII-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
52mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
800mW (Ta), 142W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
8-DSOP Advance
Package / Case
8-PowerWDFN

Datasheet & Documents

Datasheets

Additional Information

Other Names
264-TPW5200FNH,L1QDKR
264-TPW5200FNHL1QTR-DG
264-TPW5200FNH,L1QCT
264-TPW5200FNHL1QTR
264-TPW5200FNH,L1QTR
264-TPW5200FNH,L1QTR-DG
Standard Package
5,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
onsemi

NTMFS006N12MCT1G

POWER MOSFET, 120V SINGLE N CHAN

vishay-siliconix

SIHFPS40N50L-GE3

POWER MOSFET SUPER-247, 100 M @

toshiba-semiconductor-and-storage

TK19A50W,S5X

PB-F POWER MOSFET TRANSISTOR TO-

rohm-semi

RA1C030LDT5CL

NCH 20V 3.0A, SMM1006, SMM1006: