Manufacturer Product Number:
TW060N120C,S1F
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TW060N120C,S1F-DG
Description:
G3 1200V SIC-MOSFET TO-247 60MO
Detailed Description:
N-Channel 1200 V 36A (Tc) 170W (Tc) Through Hole TO-247
Inventory:
50 Pcs New Original In Stock
12987451
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TW060N120C,S1F Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
78mOhm @ 18A, 18V
Vgs(th) (Max) @ Id
5V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1530 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
175°C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
264-TW060N120CS1F
TW060N120C,S1F(S
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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