Manufacturer Product Number:
XPJR6604PB,LXHQ
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
XPJR6604PB,LXHQ-DG
Description:
40V; UMOS9; 0.66MOHM; S-TOGL
Detailed Description:
N-Channel 40 V 200A (Ta) 375W (Tc) Surface Mount S-TOGL™
Inventory:
2857 Pcs New Original In Stock
13005807
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XPJR6604PB,LXHQ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
U-MOSIX-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
0.66mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
128 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11380 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
175°C
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
S-TOGL™
Package / Case
5-PowerSFN
Datasheet & Documents
Datasheets
Additional Information
Other Names
264-XPJR6604PB,LXHQDKR
264-XPJR6604PB,LXHQTR-DG
264-XPJR6604PBLXHQCT
XPJR6604PB,LXHQ(O
264-XPJR6604PB,LXHQCT
264-XPJR6604PB,LXHQDKR-DG
264-XPJR6604PB,LXHQTR
264-XPJR6604PB,LXHQCT-DG
264-XPJR6604PBLXHQTR
264-XPJR6604PBLXHQDKR
Standard Package
1,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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SIC, MOSFET, 45M, 650V, TO-247-4
