TP65H070LDG-TR
Manufacturer Product Number:

TP65H070LDG-TR

Product Overview

Manufacturer:

Transphorm

DiGi Electronics Part Number:

TP65H070LDG-TR-DG

Description:

650 V 25 A GAN FET
Detailed Description:
N-Channel 650 V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)

Inventory:

1651 Pcs New Original In Stock
13001158
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TP65H070LDG-TR Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
Tape & Reel (TR)
Series
TP65H070L
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN

Datasheet & Documents

Datasheets
TP65H070L Datasheet

Additional Information

Other Names
1707-TP65H070LDG-TR
1707-TP65H070LDG-TRDKR
1707-TP65H070LDG-TRCT
Standard Package
500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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