Manufacturer Product Number:
TP65H070LDG
Product Overview
Manufacturer:
Transphorm
DiGi Electronics Part Number:
TP65H070LDG-DG
Description:
GANFET N-CH 650V 25A 3PQFN
Detailed Description:
N-Channel 650 V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)
Inventory:
13446137
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TP65H070LDG Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
-
Series
TP65H070L
Product Status
Discontinued at Digi-Key
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN
Base Product Number
TP65H070
Datasheet & Documents
Datasheets
Additional Information
Standard Package
60
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
TP65H035WSQA
GANFET N-CH 650V 47.2A TO247-3
TPH3208LDG
GANFET N-CH 650V 20A 3PQFN
TPH3208LS
GANFET N-CH 650V 20A 3PQFN
