Manufacturer Product Number:
TP65H300G4LSG-TR
Product Overview
Manufacturer:
Transphorm
DiGi Electronics Part Number:
TP65H300G4LSG-TR-DG
Description:
GANFET N-CH 650V 6.5A 3PQFN
Detailed Description:
N-Channel 650 V 6.5A (Tc) 21W (Tc) Surface Mount 3-PQFN (8x8)
Inventory:
6582 Pcs New Original In Stock
13275975
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TP65H300G4LSG-TR Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V
Rds On (Max) @ Id, Vgs
312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
9.6 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
21W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN
Base Product Number
TP65H300
Datasheet & Documents
Datasheets
Additional Information
Other Names
1707-TP65H300G4LSGDKRINACTIVE
1707-TP65H300G4LSG
1707-TP65H300G4LSGCT
TP65H300G4LSG
1707-TP65H300G4LSG-TRCT
1707-TP65H300G4LSG-ND
1707-TP65H300G4LSG-TRDKR
1707-TP65H300G4LSGCT-ND
1707-TP65H300G4LSGTR-ND
1707-TP65H300G4LSGTR
1707-TP65H300G4LSGDKR
1707-TP65H300G4LSGDKR-ND
1707-TP65H300G4LSG-TR
1707-TP65H300G4LSGCTINACTIVE
Standard Package
3,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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