TPH3202PD
Manufacturer Product Number:

TPH3202PD

Product Overview

Manufacturer:

Transphorm

DiGi Electronics Part Number:

TPH3202PD-DG

Description:

GANFET N-CH 600V 9A TO220AB
Detailed Description:
N-Channel 600 V 9A (Tc) 65W (Tc) Through Hole TO-220AB

Inventory:

13446567
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

TPH3202PD Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 480 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

Datasheet & Documents

Datasheets

Additional Information

Standard Package
50

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
STP15N60M2-EP
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
334
DiGi PART NUMBER
STP15N60M2-EP-DG
UNIT PRICE
0.76
SUBSTITUTE TYPE
Similar
PART NUMBER
TK10E60W,S1VX
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
30
DiGi PART NUMBER
TK10E60W,S1VX-DG
UNIT PRICE
1.31
SUBSTITUTE TYPE
Similar
DIGI Certification
Related Products
transphorm

TPH3206LDB

GANFET N-CH 650V 16A PQFN

transphorm

TPH3208LSG

GANFET N-CH 650V 20A 3PQFN

transphorm

TP65H070LSG

GANFET N-CH 650V 25A 3PQFN

transphorm

TPH3206LDGB

GANFET N-CH 650V 16A PQFN