Manufacturer Product Number:
TPH3212PS
Product Overview
Manufacturer:
Transphorm
DiGi Electronics Part Number:
TPH3212PS-DG
Description:
GANFET N-CH 650V 27A TO220AB
Detailed Description:
N-Channel 650 V 27A (Tc) 104W (Tc) Through Hole TO-220AB
Inventory:
13446813
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TPH3212PS Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
72mOhm @ 17A, 8V
Vgs(th) (Max) @ Id
2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
1130 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
TPH3212
Datasheet & Documents
Datasheets
Additional Information
Standard Package
50
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
TPH3208LD
GANFET N-CH 650V 20A 4PQFN
TPH3206PD
GANFET N-CH 600V 17A TO220AB
TP65H035WS
GANFET N-CH 650V 46.5A TO247-3