Home
Products
Manufacturers
About DiGi
Contact Us
Blogs & Posts
RFQ/Quote
United Kingdom
Sign in
Selective Language
Current language of your choice:
United Kingdom
Switch:
English
Europe
United Kingdom
France
Spain
Turkey
Moldova
Lithuania
Norway
Germany
Portugal
Slovakia
ltaly
Finland
Russian
Bulgaria
Denmark
Estonia
Poland
Ukraine
Slovenia
Czech
Greek
Croatia
Israel
Serbia
Belarus
Netherlands
Sweden
Montenegro
Basque
Iceland
Bosnia
Hungarian
Romania
Austria
Belgium
Ireland
Asia / Pacific
China
Vietnam
Indonesia
Thailand
Laos
Filipino
Malaysia
Korea
Japan
HongKong
TaiWan
Singapore
Pakistan
Saudi Arabia
Qatar
Kuwait
Cambodia
Myanmar
Africa,India and Middle East
United Arab Emirates
Tajikistan
Madagascar
India
Iran
DR Congo
South Africa
Egypt
Kenya
Tanzania
Ghana
Senegal
Morocco
Tunisia
South America / Oceania
New Zealand
Angola
Brazil
Mozambique
Peru
Colombia
Chile
Venezuela
Ecuador
Bolivia
Uruguay
Argentina
Paraguay
Australia
North America
United States
Haiti
Canada
Costa Rica
Mexico
About DiGi
About Us
About Us
Our Certifications
DiGi Introduction
Why DiGi
Policy
Quality Policy
Terms of use
RoHS Compliance
Return Process
Resources
Product Categories
Manufacturers
Blogs & Posts
Services
Quality Warranty
Payment Way
Global Shipment
Shipping Rates
FAQs
Manufacturer Product Number:
UF3C065080B7S
Product Overview
Manufacturer:
Qorvo
DiGi Electronics Part Number:
UF3C065080B7S-DG
Description:
SICFET N-CH 650V 27A D2PAK-7
Detailed Description:
N-Channel 650 V 27A (Tc) 136.4W (Tc) Surface Mount D2PAK-7
Inventory:
2961 Pcs New Original In Stock
12987825
Request Quote
Quantity
Minimum 1
*
Company
*
Contact Name
*
Phone
*
E-mail
Delivery Address
Message
(
*
) is mandatory
We'll get back to you within 24 hours
SUBMIT
UF3C065080B7S Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Qorvo
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Rds On (Max) @ Id, Vgs
105mOhm @ 20A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 12 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
136.4W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
UF3C065080
Datasheet & Documents
Datasheets
UF3C065080B7S
Additional Information
Other Names
2312-UF3C065080B7STR
2312-UF3C065080B7SCT
2312-UF3C065080B7SDKR
Standard Package
800
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
E3M0060065D
60M 650V SIC AUTOMOTIVE MOSFET
IPP019N06NF2SAKMA1
TRENCH 40<-<100V PG-TO220-3
GT700P08T
P-80V, -25A,RD<72M@-10V,VTH-2V~-
TK10P50W,RQ
PB-F POWER MOSFET TRANSISTOR DPA