Manufacturer Product Number:
IRFBG30PBF-BE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
IRFBG30PBF-BE3-DG
Description:
MOSFET N-CH 1000V 3.1A TO220AB
Detailed Description:
N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
Inventory:
1589 Pcs New Original In Stock
12972684
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IRFBG30PBF-BE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRFBG30
Datasheet & Documents
Datasheets
Additional Information
Other Names
742-IRFBG30PBF-BE3
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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