SI2312BDS-T1-BE3
Manufacturer Product Number:

SI2312BDS-T1-BE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI2312BDS-T1-BE3-DG

Description:

N-CHANNEL 20-V (D-S) MOSFET
Detailed Description:
N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Inventory:

8986 Pcs New Original In Stock
12977847
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SI2312BDS-T1-BE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

Datasheet & Documents

Datasheets
Si2312BDS

Additional Information

Other Names
742-SI2312BDS-T1-BE3TR
742-SI2312BDS-T1-BE3DKR
742-SI2312BDS-T1-BE3CT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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