Manufacturer Product Number:
SI4435FDY-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SI4435FDY-T1-GE3-DG
Description:
MOSFET P-CH 30V 12.6A 8SOIC
Detailed Description:
P-Channel 30 V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC
Inventory:
24208 Pcs New Original In Stock
12918003
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SI4435FDY-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen III
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
4.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4435
Datasheet & Documents
Datasheets
Additional Information
Other Names
SI4435FDY-T1-GE3DKR
SI4435FDY-T1-GE3TR
SI4435FDY-T1-GE3CT
SI4435FDY-T1-GE3-DG
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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