SI5513DC-T1-GE3
Manufacturer Product Number:

SI5513DC-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI5513DC-T1-GE3-DG

Description:

MOSFET N/P-CH 20V 3.1A 1206-8
Detailed Description:
Mosfet Array 20V 3.1A, 2.1A 1.1W Surface Mount 1206-8 ChipFET™

Inventory:

RFQ Online
12915082
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SI5513DC-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
Vishay
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3.1A, 2.1A
Rds On (Max) @ Id, Vgs
75mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™
Base Product Number
SI5513

Additional Information

Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
SI5515CDC-T1-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
11790
DiGi PART NUMBER
SI5515CDC-T1-GE3-DG
UNIT PRICE
0.24
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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