SI7615CDN-T1-GE3
Manufacturer Product Number:

SI7615CDN-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI7615CDN-T1-GE3-DG

Description:

MOSFET P-CH 20V 35A PPAK1212-8
Detailed Description:
P-Channel 20 V 35A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8

Inventory:

3 Pcs New Original In Stock
12914159
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SI7615CDN-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen III
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
9mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
3860 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SI7615

Datasheet & Documents

Additional Information

Other Names
SI7615CDN-T1-GE3TR
SI7615CDN-T1-GE3CT
SI7615CDN-T1-GE3DKR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
TPN4R712MD,L1Q
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
7052
DiGi PART NUMBER
TPN4R712MD,L1Q-DG
UNIT PRICE
0.25
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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