SI8425DB-T1-E1
Manufacturer Product Number:

SI8425DB-T1-E1

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI8425DB-T1-E1-DG

Description:

MOSFET P-CH 20V 4WLCSP
Detailed Description:
P-Channel 20 V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)

Inventory:

900 Pcs New Original In Stock
12917207
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SI8425DB-T1-E1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
23mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta), 2.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-WLCSP (1.6x1.6)
Package / Case
4-UFBGA, WLCSP
Base Product Number
SI8425

Datasheet & Documents

Datasheets

Additional Information

Other Names
SI8425DB-T1-E1CT
SI8425DB-T1-E1DKR
SI8425DB-T1-E1TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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