SI8465DB-T2-E1
Manufacturer Product Number:

SI8465DB-T2-E1

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SI8465DB-T2-E1-DG

Description:

MOSFET P-CH 20V 4MICROFOOT
Detailed Description:
P-Channel 20 V 2.5A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Inventory:

90 Pcs New Original In Stock
12920625
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SI8465DB-T2-E1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Cut Tape (CT)
Series
TrenchFET®
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
104mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
780mW (Ta), 1.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-XFBGA, CSPBGA
Base Product Number
SI8465

Additional Information

Other Names
SI8465DB-T2-E1TR
SI8465DBT2E1
SI8465DB-T2-E1CT
SI8465DB-T2-E1DKR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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