Manufacturer Product Number:
SI8812DB-T2-E1
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SI8812DB-T2-E1-DG
Description:
MOSFET N-CH 20V 4MICROFOOT
Detailed Description:
N-Channel 20 V 2.3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Inventory:
12913742
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SI8812DB-T2-E1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 8 V
Vgs (Max)
±5V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-UFBGA
Base Product Number
SI8812
Datasheet & Documents
Datasheets
Additional Information
Other Names
SI8812DBT2E1
SI8812DB-T2-E1TR
SI8812DB-T2-E1DKR
SI8812DB-T2-E1CT
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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