Manufacturer Product Number:
SI8816EDB-T2-E1
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SI8816EDB-T2-E1-DG
Description:
MOSFET N-CH 30V 4MICROFOOT
Detailed Description:
N-Channel 30 V 1.5A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Inventory:
12786731
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SI8816EDB-T2-E1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
109mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
195 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-XFBGA
Base Product Number
SI8816
Datasheet & Documents
Datasheets
Additional Information
Other Names
SI8816EDB-T2-E1CT
SI8816EDB-T2-E1TR
SI8816EDB-T2-E1DKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
Related Products
SIDR626DP-T1-GE3
MOSFET N-CH 60V 42.8A/100A PPAK
SIR472DP-T1-GE3
MOSFET N-CH 30V 20A PPAK SO-8
SQ2398ES-T1_GE3
MOSFET N-CH 100V 1.6A SOT23-3
