SIA430DJT-T4-GE3
Manufacturer Product Number:

SIA430DJT-T4-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIA430DJT-T4-GE3-DG

Description:

MOSFET N-CH 20V 12A/12A PPAK
Detailed Description:
N-Channel 20 V 12A (Ta), 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6

Inventory:

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SIA430DJT-T4-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA430

Datasheet & Documents

Datasheets
SIA430DJT-T4-GE3

Additional Information

Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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