Manufacturer Product Number:
SIDR104AEP-T1-RE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIDR104AEP-T1-RE3-DG
Description:
N-CHANNEL 100 V (D-S) 175C MOSFE
Detailed Description:
N-Channel 100 V 21.1A (Ta), 90.5A (Tc) 6.5W (Ta), 120W (Tc) Surface Mount PowerPAK® SO-8DC
Inventory:
8738 Pcs New Original In Stock
12995186
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SIDR104AEP-T1-RE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
21.1A (Ta), 90.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3250 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
6.5W (Ta), 120W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
Datasheet & Documents
Datasheets
Additional Information
Other Names
742-SIDR104AEP-T1-RE3TR
742-SIDR104AEP-T1-RE3CT
742-SIDR104AEP-T1-RE3DKR
Standard Package
3,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
