Manufacturer Product Number:
SIDR610DP-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIDR610DP-T1-GE3-DG
Description:
MOSFET N-CH 200V 8.9A/39.6A PPAK
Detailed Description:
N-Channel 200 V 8.9A (Ta), 39.6A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Inventory:
12786688
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SIDR610DP-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
Base Product Number
SIDR610
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIDR610DP-T1-GE3TR
SIDR610DP-T1-GE3CT
SIDR610DP-T1-GE3DKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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