Manufacturer Product Number:
SIE808DF-T1-E3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIE808DF-T1-E3-DG
Description:
MOSFET N-CH 20V 60A 10POLARPAK
Detailed Description:
N-Channel 20 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Inventory:
12918410
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SIE808DF-T1-E3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8800 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (L)
Package / Case
10-PolarPAK® (L)
Base Product Number
SIE808
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIE808DF-T1-E3TR
742-SIE808DF-T1-E3CT
742-SIE808DF-T1-E3TR
SIE808DF-T1-E3DKR-DG
SIE808DF-T1-E3TR-DG
SIE808DF-T1-E3CT
SIE808DF-T1-E3CT-DG
742-SIE808DF-T1-E3DKR
SIE808DF-T1-E3DKR
SIE808DFT1E3
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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