Manufacturer Product Number:
SIE818DF-T1-E3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIE818DF-T1-E3-DG
Description:
MOSFET N-CH 75V 60A 10POLARPAK
Detailed Description:
N-Channel 75 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Inventory:
12916104
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SIE818DF-T1-E3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 38 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (L)
Package / Case
10-PolarPAK® (L)
Base Product Number
SIE818
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIE818DF-T1-E3CT
SIE818DF-T1-E3TR
SIE818DFT1E3
SIE818DF-T1-E3DKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SQJ401EP-T1_GE3
MOSFET P-CH 12V 32A PPAK SO-8
SI7421DN-T1-GE3
MOSFET P-CH 30V 6.4A PPAK 1212-8
SQ3427EV-T1_GE3
MOSFET P-CH 60V 5.3A 6TSOP
