SIHA17N80E-GE3
Manufacturer Product Number:

SIHA17N80E-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHA17N80E-GE3-DG

Description:

N-CHANNEL 800V
Detailed Description:
N-Channel 800 V 6A (Tc) 35W (Tc) Through Hole TO-220 Full Pack

Inventory:

1980 Pcs New Original In Stock
12985593
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIHA17N80E-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
E
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2408 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack

Datasheet & Documents

Datasheets

Additional Information

Other Names
742-SIHA17N80E-GE3TR
742-SIHA17N80E-GE3CT
742-SIHA17N80E-GE3DKRINACTIVE
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
nexperia

NXV100XPR

NXV100XP/SOT23/TO-236AB

diodes

DMN2053UWQ-7

MOSFET BVDSS: 8V~24V SOT323 T&R

infineon-technologies

BSS139IXTMA1

MOSFET N-CH 250V 100MA SOT23-3

stmicroelectronics

SCT040H65G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE