SIHB120N60E-T5-GE3
Manufacturer Product Number:

SIHB120N60E-T5-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHB120N60E-T5-GE3-DG

Description:

N-CHANNEL 600V
Detailed Description:
N-Channel 600 V 25A (Tc) 179W (Tc) Surface Mount TO-263 (D2PAK)

Inventory:

795 Pcs New Original In Stock
12977873
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIHB120N60E-T5-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
E
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1562 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet & Documents

Datasheets

Additional Information

Other Names
742-SIHB120N60E-T5-GE3TR
742-SIHB120N60E-T5-GE3DKR
742-SIHB120N60E-T5-GE3CT
Standard Package
800

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
SIHB120N60E-T1-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
760
DiGi PART NUMBER
SIHB120N60E-T1-GE3-DG
UNIT PRICE
2.23
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
Related Products
vishay-siliconix

SI2307BDS-T1-BE3

P-CHANNEL 30-V (D-S) MOSFET

vishay-siliconix

SI3464DV-T1-BE3

N-CHANNEL 20-V (D-S) MOSFET

vishay-siliconix

SQJ474EP-T1_BE3

N-CHANNEL 100-V (D-S) 175C MOSFE

vishay-siliconix

SI3443CDV-T1-BE3

P-CHANNEL 20-V (D-S) MOSFET