SIHB28N60EF-T5-GE3
Manufacturer Product Number:

SIHB28N60EF-T5-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHB28N60EF-T5-GE3-DG

Description:

N-CHANNEL 600V
Detailed Description:
N-Channel 600 V 28A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)

Inventory:

800 Pcs New Original In Stock
12999322
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIHB28N60EF-T5-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
123mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2714 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet & Documents

Datasheets

Additional Information

Other Names
742-SIHB28N60EF-T5-GE3CT
742-SIHB28N60EF-T5-GE3TR
742-SIHB28N60EF-T5-GE3DKR
Standard Package
800

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
littelfuse

IXFP18N65X3

DISCRETE MOSFET 18A 650V X3 TO22

taiwan-semiconductor

TSM480P06CP

-60V, -20A, SINGLE P-CHANNEL POW

taiwan-semiconductor

TSM038N04LCP

40V, 135A, SINGLE N-CHANNEL POWE

good-ark-semiconductor

SSF3912S

MOSFET, N-CH, SINGLE, 6.5A, 30V-